SAMSUNG 980 SSD 1TB PCIe 4.0 NVMe
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Winsoft
Rs 49,000
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Description
SAMSUNG 980 SSD 1TB PCIe 4.0 NVMe
| Brand | Samsung |
|---|---|
| Product Filter | NVMe |
| Capacity | 1TB |
| Solid-State-Drive | |
| Capacity: | 1 TB (1024 GB) |
| Variants: | 250 GB 500 GB 1 TB |
| Overprovisioning: | 70.3 GB / 7.4 % |
| Production: | Active |
| Released: | Sep-20 |
| Price at Launch: | 130 USD |
| Part Number: | MZ-V8V1T0BW |
| Market: | Consumer |
| Physical | |
| Form Factor: | M.2 2280 (Single-Sided) |
| Interface: | PCIe 3.0 x4 |
| Protocol: | NVMe 1.4 |
| Power Draw: | 0.05 W (Idle) |
| 4.6 W (Avg) | |
| 5.1 W (Max) | |
| Controller | |
| Manufacturer: | Samsung |
| Name: | Pablo (S4LR033) |
| Architecture: | ARM 32-bit Cortex-R |
| Foundry: | Samsung FinFET |
| Flash Channels: | 4 @ 1,200 MT/s |
| Core Count: | Dual-Core |
| Process: | 14 nm |
| Chip Enables: | 4 |
| Controller Features: | HMB (enabled) |
| NAND Flash | |
| Manufacturer: | Samsung |
| Name: | V-NAND V6 |
| Type: | TLC |
| Technology: | 128-layer |
| Speed: | 1200 MT/s |
| Capacity: | 1 chip @ 8 Tbit |
| Toggle: | 4 |
| Topology: | Charge Trap |
| Die Size: | 102 mm² |
| (5.0 Gbit/mm²) | |
| Dies per Chip: | 16 dies @ 512 Gbit |
| Planes per Die: | 2 |
| Decks per Die: | 1 |
| Word Lines: | 136 per NAND String |
| 94.1% Vertical Efficiency | |
| Read Time (tR): | 45 µs |
| Program Time (tProg): | 390 µs |
| Block Erase Time (tBERS): | 3.5 ms |
| Die Read Speed: | 711 MB/s |
| Die Write Speed: | 82 MB/s |
| Endurance: | 3000 P/E Cycles |
| (up to) | |
| Page Size: | 16 KB |
| DRAM Cache | |
| Type: | None |
| Host-Memory-Buffer (HMB): | 64 MB |
| Performance | |
| Sequential Read: | 3,500 MB/s |
| Sequential Write: | 3,000 MB/s |
| Random Read: | 480,000 IOPS |
| Random Write: | 500,000 IOPS |
| Endurance: | 600 TBW |
| Warranty: | 5 Years |
| MTBF: | 1.5 Million Hours |
| Drive Writes Per Day (DWPD): | 0.3 |
| SLC Write Cache: | approx. 160 GB |
| (dynamic only) | |
| Speed when Cache Exhausted: | approx. 430 MB/s |
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